ISC 2SC2981

Inchange Semiconductor
Product Specification
2SC2981
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltatge
·High speed
APPLICATIONS
·For high voltatge ,high speed and power
switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
8
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2981
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=∞
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
900
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=2.5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=750V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.8A ; VCE=5V
15
hFE-2
DC current gain
IC=4A ; VCE=5V
10
2
MIN
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SC2981
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3