ISC 2SC3168

Inchange Semiconductor
Product Specification
2SC3168
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For power switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
20
A
ICM
Collector current-Peak
40
A
IB
Base current
7
A
IBM
Base current-Peak
14
A
PT
Total power dissipation
200
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.63
℃/W
Tmb=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
Inchange Semiconductor
Product Specification
2SC3168
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=10A; IB=2A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=10A; IB=2A
1.5
V
ICBO
Collector cut-off current
At rated voltage
0.1
mA
ICEO
Collector cut-off current
At rated voltage
0.1
mA
IEBO
Emitter cut-off current
At rated voltage
0.1
mA
hFE
DC current gain
IC=10A ; VCE=2V
Transition frequency
IC=2A ; VCE=10V
fT
2
400
UNIT
V
10
40
20
MHz
Inchange Semiconductor
Product Specification
2SC3168
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3