Inchange Semiconductor Product Specification 2SC3285 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High speed switching ·Good linearity of hFE ·High VCBO APPLICATIONS ·For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICP Collector current-peak 6 A IB Base current 2 A PC Collector power dissipation TC=25℃ 70 Ta=25℃ 2.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3285 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ; IE=0 VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A 1.5 V VBE(sat) Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE DC current gain IC=2A ; VCE=5V Transition frequency IC=0.2A ; VCE=5V fT 800 UNIT V 6 4 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=2A; IB1=0.4A;IB2=-0.8A VCC=250V 2 1.0 μs 2.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC3285 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3