isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation @TC=25℃ 0.2 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 μA hFE DC Current Gain IC= 20mA ; VCE= 10V Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.55 Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 11.5 Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz 1.1 fT Cre ︱S21e︱2 NF PARAMETER hFE Classification Class Q R S Marking R23 R24 R25 hFE 50-100 80-160 125-250 isc Website：www.iscsemi.cn 2 50 300 7 GHz 1.0 pF dB 2.0 dB isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 TYPCIAL CHARACTERISTICS (Ta=25℃) DC Current Gain vs. Collector Current DC Current Gain HFE 200 150 100 50 0 0.1 1 10 100 Collectot current IC(mA) Total Power DissipationPtd(mW) Total Power Dissipation vs. Ambient Temperature 250 200 150 100 50 0 25 50 75 100 Ambient TemeperatureTA( ℃ Gain Bandwidth Product Vs.Colllector Current Insertion Power Gain ( | S21|2)(dB) Gain Bandwidth Product fT(GHz) 10 5 0 1 10 100 1 10 Figure vs.Collector 4 3 2 1 0 10 Collector Current Ic(mA) isc Website：www.iscsemi.cn 100 Insertion Power Gain and Maximum Unilateral Power Gain vs. Frequency Insertion power gain ︱S21︱2 (dB) maximum unilateral power gainGUM(dB) Noise C 100 Collector Current Ic(mA) Collect or Current Ic(mA) Noise Figure NF(dB) ) 15 1 1 150 Insertion Power Gain Vs. Collector Current 10 5 125 30 25 20 15 10 5 0.1 1 Frequency(GHz) 10 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor SMITH 2SC3356 CHART （Test Condition：VCE=10V, IC=20mA , ZO=50Ω，f= 0.2GHz-2.0GHz） S12- FREQUENCY Condition：Vce=10V,Ic=20mA S21-FREQUENCY Condition：Vce=10V/Ic=20mA 90° 90° 120° 120° 0.25 0.2 0.15 150° 0.1 0.05 60° 20 0.2GHz 150° 15 30° 10 5 180° 2GHz -60° 2GHz0 0.2GHz -30° -60° -120° -90° -90° S11、S22 -FREQUENCY isc Website：www.iscsemi.cn 30° -150° -30° -150° -120° 180° 0 60° 4 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 S-PARAMETER VCE = 10 V, IC = 20 mA S21 S11 Freque. S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.2 0.45 -70.42 16.73 150.2 0.04 89.27 0.42 -12.05 0.4 0.4 -177.3 9.3 94.32 0.06 65.65 0.21 -53.52 0.6 0.41 150.4 6.2 72.41 0.07 55.63 0.17 -76.62 0.8 0.41 126.3 4.69 55.83 0.1 47.91 0.17 -97.1 1 0.42 104.6 3.75 40.65 0.12 38.96 0.17 -119 1.2 0.42 85.22 3.17 26.22 0.14 30.11 0.17 -138.9 1.4 0.42 65.91 2.74 13.54 0.17 21.39 0.18 -158.9 1.6 0.42 47.16 2.4 1.03 0.2 12.16 0.19 -177.5 1.8 0.41 27.84 2.13 -12.34 0.22 2.27 0.21 164.93 0.2 0.45 -70.42 16.73 150.2 0.04 89.27 0.42 -12.05 VCE = 10 V, IC = 5 mA S21 S11 Freque. S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.2 0.77 -3.8 6.78 -177.5 0.06 99.12 0.8 6.86 0.4 0.62 -112.9 6.04 117.8 0.08 50.85 0.44 -48.92 0.6 0.52 -174.9 4.82 83 0.09 36.61 0.35 -73.18 0.8 0.49 150 3.81 61.86 0.1 30.36 0.32 -93.35 1 0.48 122.4 3.09 43.61 0.11 24.14 0.31 -113.7 1.2 0.48 99.54 2.64 27.16 0.12 18.43 0.31 -133.2 1.4 0.48 78.4 2.27 13.76 0.14 13.12 0.32 -153.3 1.6 0.48 58 1.97 0.66 0.17 6.97 0.32 -172.6 1.8 0.47 37.79 1.75 -13.71 0.18 0.2 0.34 168.78 0.2 0.46 17.69 1.66 -25.39 0.2 -9.01 0.36 150.36 isc Website：www.iscsemi.cn