isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3412 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V (Min) ·High Power Dissipation APPLICATIONS ·Designed for TV horizontal deflection output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage MAX UNIT s c s i . w w w 1300 V 500 V 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ -45~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3412 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V Collector Cutoff Current VCE= 1300V; RBE= 0 0.5 mA ICES CONDITIONS MAX UNIT 500 V 6 V B n c . i m e s c s i . w Storage Time TYP. B Switching Times tstg MIN 3 μs 0.2 μs IC= 5A; IB1 = 1A tf Fall Time w w isc Website：www.iscsemi.cn