isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3416 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= 200V (Min) ·Complement to Type 2SA1352 APPLICATIONS ·Designed for color TV chroma output, high-voltage driver applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 200 V 200 V 5.0 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak 0.2 A Collector Power Dissipation @ Ta=25℃ 1.2 PC W Total Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 5 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3416 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 200 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 20mA; IB= 2mA 1.0 V VCB= 150V; IE= 0 0.1 μA VEB= 4V; IC= 0 0.1 μA ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT COB PARAMETER . w w n c . i m e s c is w IC= 10mA ; VCE= 40V 40 320 Current-Gain—Bandwidth Product IC= 10mA ; VCE= 30V 70 MHz Output Capacitance IE= 0; VCB= 30V; f= 1.0MHz 1.7 pF hFE Classifications C D E F 40-80 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2