isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3527 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage VALUE UNIT s c s i . w w w 500 V 400 V 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A Base Current-Continuous 6 A IB B Collector Power Dissipation @ TC=25℃ 100 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3527 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE-1 DC Current Gain IC= 2A; VCE= 5V hFE-2 DC Current Gain m e s isc fT Switching times Turn-On Time tstg Storage Time tf B . w w w ton IC= 1A; VCE= 10V; f= 1MHz 2 15 n c . i IC= 7A; IB1= 1.4A, IB2= -1.4A; VCC= 125V Fall Time isc Website：www.iscsemi.cn V B IC= 7A; VCE= 5V Current-Gain—Bandwidth Product 400 UNIT 10 15 MHz 1.0 μs 2.5 μs 1.0 μs