ISC 2SC3551

Inchange Semiconductor
Product Specification
2SC3551
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
5
A
IB
Base current
3
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
2SC3551
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
900
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.5
V
ICBO
Collector cut-off current
VCB=900V IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=10V; IC=0
1.0
mA
hFE
DC current gain
IC=2A ; VCE=5V
1.0
μs
4.0
μs
0.8
μs
10
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A; RL=100Ω
IB1=0.6A; IB2=-1.2A
2
Inchange Semiconductor
Product Specification
2SC3551
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC3551
Silicon NPN Power Transistors
4