Inchange Semiconductor Product Specification 2SC3568 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1396 ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current(DC) 10 A ICM Collector current-peak 20 A IB Base current (DC) 5 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3568 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=5A ;IB=0.5A;L=1mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.6 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA ICEX Collector cut-off current VCE=100V;VBE(OFF)=-1.5V Ta=125℃ 10 1.0 μA mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 40 hFE-3 DC current gain IC=5A ; VCE=5V 20 100 UNIT V 200 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A ;IB1=-IB2=0. 5A VCC≈50V;RL=10Ω hFE-2 Classifications M L K 40-80 60-120 100-200 2 0.5 μs 1.5 μs 0.5 μs Inchange Semiconductor Product Specification 2SC3568 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SC3568 Silicon NPN Power Transistors 4