Inchange Semiconductor Product Specification 2SC3679 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS C I M E SE Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector INC OND G N A H R O T UC VALUE UNIT 900 V 800 V 7 V IC Collector current (DC) 5 A ICM Collector current -peak 10 A IB Base current (DC) 2.5 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3679 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V fT COB 体 导 半 Collector output capacitance 固电 Switching times ton ts tf IN Storage time IC=2.0A IB1=0.3A ,IB2=-1A VCC=250V, RL=125Ω Fall time 2 MIN TYP. MAX 800 UNIT V 10 30 6 MHz 75 pF R O T UC D N O IC f=1MHz;VCB=10V EM S E NG CHA Turn-on time CONDITIONS 1.0 μs 5.0 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3679 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimentions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3679 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC