isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3751 DESCRIPTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE n c . i m e UNIT s c s i . w w w 1100 V 800 V 7 V 1.5 A 5 A IC Collector Current-Continuous ICM Collector Current-Pulse IB Base Current-Continuous 0.8 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3751 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain hFE-2 DC Current Gain fT COB w Output Capacitance ton Turn-on Time tstg Storage Time tf IC= 0.1A; VCE= 5V 10 IC= 0.5A; VCE= 5V 8 10-20 15-30 20-40 isc Website：www.iscsemi.cn UNIT 40 MHz IE= 0; VCB= 10V; f= 1MHz 35 pF hFE-1 Classifications M MAX 15 Fall Time L TYP. IC= 0.1A; VCE= 10V IC= 1A, IB1= 0.2A; IB2= -0.4A; RL= 400Ω, VCC= 400V K MIN n c . i m e s c s .i ww Current-Gain—Bandwidth Product Switching times CONDITIONS 2 0.5 μs 3.0 μs 0.3 μs