Inchange Semiconductor Product Specification 2SC3762 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High speed switching ・High current capability APPLICATIONS ・For use in high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol 体 导 半 固电 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER A H C IN D N O IC R O T UC CONDITIONS MAX UNIT Collector-base voltage Open emitter 150 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 6 V 15 A 65 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3762 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 0.6 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 hFE 体 导 半 CONDITIONS 固电 DC current gain IC=5A ; VCE=5V IN 2 TYP. 30 MAX TOR C U D ON C I M E SE G N A CH MIN 10 120 UNIT μA Inchange Semiconductor Product Specification 2SC3762 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions 3 R O T UC