isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3884 DESCRIPTION ·High Breakdown Voltage: VCBO= 1400V (Min) ·High Switching Speed APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 1400 V 600 V 5 V IC Collector Current- Continuous 6 A ICM Collector Current- Peak 12 A IB Base Current- Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3884 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V fT COB w w Output Capacitance tf B TYP. n c . i m e IC= 0.1A; VCE= 10V IE= 0; VCB= 10V; ftest= 1.0MHz MAX 600 UNIT V B Storage Time 8 3 MHz 210 pF 2.5 μs 0.15 μs ICP= 4A, IB1= 0.8A; IB2= -1.6A; RL= 50Ω Fall Time isc Website：www.iscsemi.cn MIN B s c s i . w Current-Gain—Bandwidth Product Switching Times , Resistive load tstg CONDITIONS 2