isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3980 · DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 900 V 900 V 800 V 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB Base Current-Continuous 2 A Collector Power Dissipation @Ta=25℃ 3 B PC Tj Tstg W Collector Power Dissipation @TC=25℃ 70 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3980 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain fT ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn MIN TYP. n c . i m e s c s .i IC= 0.2A; VCE= 5V; f= 1MHz IC= 2A; IB1= 0.4A; IB2= -0.8A; VCC= 250V UNIT V B IC= 2A; VCE= 5V MAX 800 B w w w Current-Gain—Bandwidth Product Switching Times CONDITIONS 8 6 15 MHz 0.7 μs 2.5 μs 0.3 μs