isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4131 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w UNIT 100 V 50 V 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4131 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 80mA 1.2 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 15V ; IC= 0 10 μA hFE DC current gain IC= 5A ; VCE= 1V fT COB ton Turn-on Time tstg Storage Time 50 n c . i m e s c s .i MAX UNIT V 60 360 IE= -1A ; VCE= 12V 18 MHz IE=0 ; VCB= 10V; ftest= 1.0MHz 210 pF 0.5 μs 2.0 μs 0.4 μs IC= 5A , IB1= 80mA; IB2= -80mA RL= 4Ω; VCC= 20V Fall Time isc Website：www.iscsemi.cn TYP. B w w w Output Capacitance MIN B Current-Gain—Bandwidth Product Switching times tf CONDITIONS 2