isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4313 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V s c s i . w w w IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A 4 A 8 A IB Base Current-Continuous IBM Base Current-Peak PT Total Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg n c . i m e Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4313 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 2.5 V ICBO Collector Cutoff Current At rated Voltage 100 μA ICEO Collector Cutoff Current At rated Voltage 200 μA IEBO Emitter Cutoff Current At rated Voltage 100 μA hFE-1 DC Current Gain IC= 5A; VCE= 2V hFE-2 DC Current Gain fT w w ton Turn-on Time tstg Storage Time TYP. B n c . i m e IC= 1mA; VCE= 2V IC= 1A; VCE= 10V IC= 5A, IB1= -IB2= 1A; RL= 50Ω; VBB2= 4V; VCC= 250V 2 MAX UNIT V B Fall Time isc Website：www.iscsemi.cn MIN 800 s c s i . w Current-Gain—Bandwidth Product Switching times tf CONDITIONS 7 5 7 MHz 0.5 μs 3.0 μs 0.5 μs