Inchange Semiconductor Product Specification 2SC4507 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High speed switching performance APPLICATIONS ・For switching regulator and general purpose power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 500 V Collector-emitter voltage Open base 400 V Emitter-base voltage Open collector 7 V 5 A 40 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4507 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustainig voltage IC=100mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V Collector cut-off current VCB=450V; IE=0 100 μA ICBO IEBO hFE-1 hFE-2 TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH Emitter cut-off current VEB=7V; IC=0 DC current gain IC=0.5A ; VCE=5V 25 DC current gain IC=2A ; VCE=5V 20 2 100 65 μA Inchange Semiconductor Product Specification 2SC4507 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3