Inchange Semiconductor Product Specification 2SC4512 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SA1726 APPLICATIONS ・Audio and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL VCBO R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 120 V Collector-emitter voltage Open base 80 V Emitter-base voltage Open collector 6 V Collector current 6 A IB Base current 3 A PC Collector dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCEO VEBO IC TC=25℃ Inchange Semiconductor Product Specification 2SC4512 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA; RBE=∞ VCE(sat) Collector-emitter saturation voltage IC=5A; IB=0.2A 0.5 V ICBO Collector cut-off current VCB=120V ;IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 μA hFE DC current gain IC=2A ; VCE=4V COB Collertor output capacitance f=1MHz; VCB=10V 110 pF Transition frequency IE=-0.5A ; VCE=12V 20 MHz fT CONDITIONS MIN TYP. MAX 80 UNIT V 50 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Switching times ton tstg tf Turn-on time VCC=30V; IC=3A IB1=-IB2=0.3A RL=10Ω Storage time Fall time hFE Classifications O P Y 50-100 70-140 90-180 2 0.16 μs 2.60 μs 0.34 μs Inchange Semiconductor Product Specification 2SC4512 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC4512 Silicon NPN Power Transistors R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 4