isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4583 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) ·Fast Switching speed APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 1200 V 800 V 7 V s c s i . w w w IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous 1 A IBM Base Current-Peak 2 A PT Total Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg n c . i m e Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4583 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current At rated Voltage 100 μA ICEO Collector Cutoff Current At rated Voltage 100 μA IEBO Emitter Cutoff Current At rated Voltage 100 μA hFE-1 DC Current Gain IC= 1.5A; VCE= 5V hFE-2 DC Current Gain fT Switching times w w ton Turn-on Time tstg Storage Time tf n c . i m e s c s i . w Current-Gain—Bandwidth Product IC= 1mA; VCE= 5V IC= 0.3A; VCE= 10V IC= 1.5A, IB1= 0.3A; IB2= -0.6A; RL= 167Ω; VBB2= 4V Fall Time isc Website：www.iscsemi.cn 800 UNIT 2 V 8 7 8 MHz 0.5 μs 3.5 μs 0.3 μs