isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4848 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power amplifier and general purpose applications. SYMBOL ww PARAMETER w n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) VALUE UNIT 250 V 120 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 15 A Collector Power Dissipation @ Ta=25℃ 2 W PC TJ Tstg Collector Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4848 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEX(SUS) Collector-Emitter Breakdown Voltage ICP= 8A; IB1= -IB2= 0.5A, IC= 5A; L= 200μH, clamped VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 100V; IB= 0; Ta= 125℃ 2.0 mA IEBO Emitter Cutoff Current VEB= 12V; IC= 0 10 μA hFE DC Current Gain IC= 3A; VCE= 5V fT COB MIN TYP. 125 B n c . i m e UNIT V B s c s i . w MAX 100 200 Current-Gain—Bandwidth Product IE= -0.5A; VCE= 10V 20 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 150 pF Switching times w w ton Turn-on Time tstg Storage Time tf CONDITIONS IC= 5A ;IB1= -IB2= 0.5A; RL= 10Ω; VCC≈ 50V Fall Time isc Website：www.iscsemi.cn 2 0.5 μs 2.5 μs 0.5 μs