Inchange Semiconductor Product Specification 2SC4916 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High speed ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A ICM Collector current-Peak 14 A IB Base current 3.5 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4916 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX 5 UNIT Emitter-base breakdown voltage IE=300mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 83 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 20 hFE-2 DC current gain IC=5A ; VCE=5V 3.8 8 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 160 VF Diode forward voltage IF=5A 1.3 fT Transition frequency IE=0.1A ; VCE=10V 1 V pF 1.8 3 V MHz Switching times resistive load ts Storage time tf Fall time ICP=5A;IB1 =1A IB2=-2A; RL=39Ω 2 2.0 3.0 μs 0.1 0.2 μs Inchange Semiconductor Product Specification 2SC4916 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SC4916 Silicon NPN Power Transistors 4