Inchange Semiconductor Product Specification 2SC4982 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 100 V Collector-emitter voltage Open base 80 V Emitter-base voltage Open collector 7 V Collector current 10 A Collector current-Peak 20 A IB Base current 1.5 A IBM Base current-peak 2 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 5.0 ℃/W VCEO VEBO IC ICM TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC4982 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.25A 0.3 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.25A 1.2 V At rated volatge 0.1 mA 0.1 mA ICBO CONDITIONS Collector cut-off current IEBO Emitter cut-off current At rated volatge hFE DC current gain IC=5A ; VCE=2V ts tf MAX 80 UNIT V 70 TOR 体 U 导 D 半 N O C 固电 I EM S E G N A INCH Transition frequency IC=1A ; VCE=10V Switching times ton TYP. Collector cut-off current ICEO fT MIN Turn-on time Storage time IC=5A;IB1=0.5A IB2=0.5A ,RL=5Ω VBB2=4V Fall time 2 50 MHz 0.3 μs 1.5 μs 0.2 μs Inchange Semiconductor Product Specification 2SC4982 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3