isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 22 A IB Base Current- Continuous 1 A IBM Base Current- Peak 2 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn 2SD1027 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1027 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ,IB= 30mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 30mA 2.0 V ICBO Collector Cutoff current VCB= 200V, IE= 0 0.1 mA ICEO Collector Cutoff current VCE= 200V, IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5 mA Current-Gain—Bandwidth Product IC= 1.5A ; VCE= 10V DC Current Gain IC= 10A ; VCE= 3V fT hFE CONDITIONS MIN TYP. MAX 200 UNIT V B 20 MHz 1500 Switching Times ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC = 10A,IB1 = -IB2= 30mA; RL= 3Ω;VBB2= 4V 2.0 μs 8.0 μs 5.0 μs