isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for color TV horizontal output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 1500 V 800 V 7 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Pulse 10 A PC Collector Power Dissipation @ TC= 25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1400 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A 1.5 V VCB= 800V; IE= 0 10 μA VEB= 5V; IC= 0 1.0 mA ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain B . w w n c . i m e s c is w B IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V tf Fall Time IC= 2A, IB1= 0.6A, IB2= -1.2A; RL= 100Ω; VCC= 200V isc Website：www.iscsemi.cn 2 8 3 MHz 0.7 μs