Inchange Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V 3 A 0.5 A IC Collector current IB Base current PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.25 1.0 V VBE Base-emitter voltage IC=0.5A ; VCE=5V 0.7 1.0 V ICBO Collector cut-off current VCB=60V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 60 hFE-2 DC current gain IC=3A ; VCE=5V 20 Transition frequency IC=0.5A; VCE=5V 3 MHz Collector output capacitance IE=0 ;f=1MHz ; VCB=10V 70 pF 0.8 μs 1.5 μs 0.8 μs fT COB CONDITIONS MIN TYP. MAX 60 UNIT V 300 Switching times ton Trun-on time ts Storage time tf Fall time RL=15Ω;VCC=30V IB1=-IB2=0.2A hFE-1 Classifications O Y GR 60-120 100-200 150-300 2 Inchange Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 Inchange Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors 4