isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V (Min) ·Complement to Type 2SB1019 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 70 V 50 V 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 1 A Collector Power Dissipation @ Ta=25℃ 2 B PC TJ Tstg n c . i m e W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1412 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 0.4 V Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.2 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 30 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance VBE(sat) fT w w ton Turn-on Time tstg Storage Time 70-140 120-240 isc Website：www.iscsemi.cn MAX 50 n c . i m e s c is IC= 1A; VCE= 1V 70 IC= 4A; VCE= 1V 30 UNIT V 240 IE= 0; VCB= 10V, ftest= 1MHz 250 pF IC= 1A; VCE= 4V 10 MHz 0.2 μs 2.5 μs 0.5 μs IB1= -IB2= 0.3A; RL= 10Ω; VCC= 30V hFE classifications Y TYP. B Fall Time O MIN B w. Current-Gain—Bandwidth Product Switching Times tf CONDITIONS 2