ISC 2SD1428

Inchange Semiconductor
Product Specification
2SD1428
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)1S package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV horizontal
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
6
A
IE
Emitter current
-6
A
PD
Total power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1428
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)EBO
Emitter-base breakdown voltage
IE=200mA; IC=0
VCE(sat)
Collector-emitter saturation voltage
IC=5A; IB=1A
5.0
V
VBE(sat)
Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition freuqency
IC=0.1A ; VCE=10V;f=1MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
Diode forward voltage
IF=6A
2.0
V
Fall time
IC=5A;IB1=1A
1.0
μs
VF
tf
2
5
UNIT
V
8
3
MHz
165
pF
Inchange Semiconductor
Product Specification
2SD1428
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.15 mm)
3