isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1544 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Color TV horizontal output applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 1500 V 600 V 5 V 3.5 A IC Collector Current- Continuous IB Base Current- Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1544 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= 3A; IB= 0.8A 8.0 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V fT COB tf w isc Website：www.iscsemi.cn MIN TYP. B B 8 n c . i m e s c is 3 MHz IE= 0; VCB= 10V; ftest= 1.0MHz 95 pF ICP= 3A, IB1(end)= 0.8A 0.5 . w w Output Capacitance Fall Time CONDITIONS 2 1.0 μs