Inchange Semiconductor Product Specification 2SD1710 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage;high speed ·High reliability. APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V 5 A 50 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1710 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 VCEsat Collector-emitter saturation voltage IC=4.5A;IB=2A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A;IB=2A 1.5 V IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCE=1500V; RBE=0 1.0 mA hFE DC current gain IC=0.5 A ; VCE=5V 2 MIN TYP. MAX 800 10 UNIT V 40 Inchange Semiconductor Product Specification 2SD1710 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3