ISC 2SD1718

Inchange Semiconductor
Product Specification
2SD1718
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1163
·Excellent linearity of hFE
·Wide area of safe operation (ASO)
·High transition frequency fT
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
180
V
VCEO
Collector-emitter voltage
Open base
180
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
ICM
Collector current-peak
25
A
PC
Collector power dissipation
3.5
W
TC=25℃
150
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1718
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
MAX
UNIT
IC=10A ;IB=1A
2.5
V
Base-emitter voltage
IC=8A ; VCE=5V
1.8
V
ICBO
Collector cut-off current
VCB=180V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
50
μA
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
60
hFE-3
DC current gain
IC=8A ; VCE=5V
20
Transition frequency
IC=0.5A ; VCE=5V
20
MHz
Collector output capacitance
f=1MHz;VCB=10V
230
pF
fT
COB
‹
CONDITIONS
hFE-2 classifications
Q
S
P
60-100
80-160
100-200
2
MIN
TYP.
200
Inchange Semiconductor
Product Specification
2SD1718
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3