isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1730 DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 1500 V 1500 V 700 V 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 15 A IB Base Current- Continuous 2 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ -55-150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1730 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A 1.5 V hFE DC Current Gain IC= 1A; VCE= 5V ICBO Collector Cutoff Current VECF fT B w ts Storage Time tf Fall Time isc Website：www.iscsemi.cn 5 25 VCB= 750V; IE= 0 10 μA VCB= 1500V; IE= 0 1.0 mA 2.3 V m e s isc . w w Switching Times, Resistive Load V B C-E Diode Forward Voltage Transition Frequency 7 UNIT IF= 5A IC= 1A; VCE= 10V n c . i 2 MHz 1.5 μs 0.2 μs IC= 4A; IB1= 0.8A; IB2= -1.6A, VCC= 200V