isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1736 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 1500 V 1500 V 700 V 7 V 2.5 A IC Collector Current-Continuous ICP Collector Current-Peak 7 A IB Base Current- Continuous 1 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ -55-150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1736 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX 7 UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A 1.5 V hFE DC Current Gain IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current B B 6 30 VCB= 750V; IE= 0 n c . i m e VCB= 1500V; IE= 0 fT s c s i . w Transition Frequency Switching Times, Resistive Load ts tf w w Storage Time Fall Time isc Website：www.iscsemi.cn IC= 0.5A; VCE= 10V 10 μA 1.0 mA 2 MHz 1.5 μs 0.2 μs IC= 2A; IB1= 0.6A; IB2= -1.2A, VCC= 200V