Inchange Semiconductor Product Specification 2SD1849 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High voltage,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER UNIT Open emitter 1500 V Collector-emitter voltage Open base 700 V Emitter-base voltage Open collector 7 V 7 A Collector current PC Collector power dissipation Tstg VALUE Collector-base voltage IC Tj CONDITIONS Max.operating junction temperature Storage temperature Ta=25℃ 3 TC=25℃ 120 W 150 ℃ -55~150 ℃ Inchange Semiconductor Product Specification 2SD1849 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.4A 8.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.4A 1.5 V VCB=750V; IE=0 10 μA VCB=1500V; IE=0 1.0 mA ICBO 7 UNIT Collector cut-off current hFE-1 DC current gain IC=1A ; VCE=5V 5 hFE-2 DC current gain IC=6A ; VCE=10V 4 fT VF V 25 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Transition frequency IC=1A ; VCE=10V;f=0.5MHz Diode forward voltage IC=7A 2 2.0 2 MHz V Inchange Semiconductor Product Specification 2SD1849 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3