Inchange Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 4 A ICM Collector current-peak 8 A IB Base current 1 A PC Collector power dissipation TC=25℃ 35 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA , IB=0 VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4A 1.5 V VBEsat Base-emitter saturation voltage IC=4A;IB=0.4A 2.0 V ICBO Collector cut-off current VCB=80V;IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=4V 70 hFE-2 DC current gain IC=4A ; VCE=4V 20 Transition frequency IC=0.2A; VCE=12V;f=10MHz fT CONDITIONS MIN TYP. MAX 60 UNIT V 250 80 MHz 0.3 μs 1.0 μs 0.2 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=4A ;IB1=0.4A IB2=-0.4A;VCC=50V hFE-1 Classifications Q P 70-150 120-250 2 Inchange Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SD2000 Silicon NPN Power Transistors 4