isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 4A, VCE= 5V) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) ·Complement to Type 2SB1502 B APPLICATIONS ·Designed for power amplification. SYMBOL ww PARAMETER w n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) VALUE UNIT 120 V 100 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A Collector Power Dissipation @Ta=25℃ 3.5 W PC Collector Power Dissipation @TC=25℃ 60 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SD2275 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2275 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 4mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 4mA 3.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 100V; IB= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain fT ton Turn-on Time tstg Storage Time IC= 0.5A; VCE= 10V VCC= 50V, IC= 4A; IB1= -IB2= 4mA, hFE-2 Classifications Q S P 5000-15000 7000-21000 8000-30000 isc Website：www.iscsemi.cn 2 MAX 100 n c . i m e Fall Time tf TYP. UNIT V B s c s i . w w w MIN B IC= 4A; VCE= 5V Current-Gain—Bandwidth Product Switching Times CONDITIONS 2000 5000 30000 20 MHz 2.5 μs 3.5 μs 1.0 μs