Inchange Semiconductor Product Specification 2SD2335 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage 5 V IC Collector current 7 A IB Base current 1.5 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2335 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA , IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V IE=0 10 μA hFE DC current gain IC=1A ; VCE=5V VF Diode forward voltage IF=6A 2.0 V 2 MIN TYP. MAX UNIT 8 Inchange Semiconductor Product Specification 2SD2335 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3