ISC 2SD2395

Inchange Semiconductor
Product Specification
2SD2395
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·Wide SOA (safe operating area)
·Complement to type 2SB1566
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
5
V
3
A
4.5
A
IC
Collector current
ICM
Collector current-peak
PC
Collector dissipation
Ta=25℃
2
W
TC=25℃
25
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD2395
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;IB=0
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=50μA ;IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50μA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=40V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
μA
hFE
DC current gain
IC=0.5A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
35
pF
fT
Transition frequency
IC=0.5A ; VCE=5V;f=30MHz
100
MHz
‹
CONDITIONS
hFE Classifications
E
F
100-200
160-320
2
MIN
TYP.
100
MAX
UNIT
320
Inchange Semiconductor
Product Specification
2SD2395
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3