isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2531 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.0 (Max)@ IC= 2.5A ·High Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 1 A Collector Power Dissipation @ Ta=25℃ 2 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 25 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2531 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V ; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 100 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 20 Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V 3 MHz Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 35 pF fT COB isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 60 UNIT V 320