Inchange Semiconductor Product Specification 2SD388 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipation APPLICATIONS ・For use in power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 150 V Collector-emitter voltage Open base 140 V Emitter-base voltage Open collector 7 V 8 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD388 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 140 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 2.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.6A 2.5 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V hFE-2 fT CONDITIONS MIN TYP. MAX 50 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=5A ; VCE=5V Transition frequency IC=1A ; VCE=10V 2 UNIT 20 9 MHz Inchange Semiconductor Product Specification 2SD388 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3