ISC 2SD536

Inchange Semiconductor
Product Specification
2SD536
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage,high speed
·Low collector saturation voltage
APPLICATIONS
·Switching regulators
·DC-DC converters
·General purpose power amplifiers
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SD536
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
200
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.1mA ;IE=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=0.1mA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=5V
2
MIN
50
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SD536
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3