Inchange Semiconductor Product Specification 2SD686 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB676 ・DARLINGTON ・High DC current gain APPLICATIONS ・Switching applications ・Hammer drive,pulse motor drive ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Emitter Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V 4 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD686 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=6mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=6mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 2.5 mA hFE-1 DC current gain IC=1A ; VCE=2V 2000 hFE-2 DC current gain IC=3A ; VCE=2V 1000 80 UNIT V R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Switching times ton ts tf Turn-on time Storage time IB1=-IB2=6mA VCC=30V;RL=10Ω Fall time 2 0.2 μs 1.5 μs 0.6 μs Inchange Semiconductor Product Specification 2SD686 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3