isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 6 A IB Base Current -Continuous 3 A PC Collector Power Dissipation@TC=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B isc Website：www.iscsemi.cn 2SD692 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD692 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCER Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= 1 kΩ 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA 1.7 V ICBO Collector Cutoff current VCB= 100V; IE=0 10 μA IEBO Emitter Cut-off current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 1A ; VCE= 4V CONDITIONS B hFE Classifications Q P O 1000-2500 2000-5000 4000-10000 isc Website：www.iscsemi.cn MIN 2 1000 MAX 10000 UNIT