Inchange Semiconductor Product Specification 2SD794 2SD794A Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SB744/744A ·High current 3A ·Excellent hFE linearity APPLICATIONS ·For use in audio frequency amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD794 Emitter-base voltage IC UNIT 70 V 45 Open base 2SD794A VEBO VALUE V 60 5 V Collector current (DC) 3 A ICM Collector current-Peak 5 A IB Base current (DC) 0.6 A PC Collector power dissipation B Open collector Ta=25℃ 1 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD794 2SD794A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD794 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 45 IC=10mA; IB=0 2SD794A V 60 VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.15A 0.3 2.0 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.15A 0.8 2.0 V ICBO Collector cut-off current VCB=45V; IE=0 1 μA IEBO Emitter cut-off current VEB=3V; IC=0 1 μA hFE-1 DC current gain IC=20mA ; VCE=5V 30 70 hFE-2 DC current gain IC=0.5A ; VCE=5V 60 100 Transition frequency IC=0.1A ; VCE=5V 60 MHz Collector output capacitance f=1MHz ; VCB=10V;IE=0 40 pF fT COB hFE-2 Classifications R O Y 60-120 100-200 160-320 2 320 Inchange Semiconductor Product Specification 2SD794 2SD794A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3