isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 2000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown VoltageV(BR)CEO= 100V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 8 A IB Base Current -Continuous 1 A PC Collector Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B isc Website：www.iscsemi.cn 2SD803 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD803 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA 1.5 V ICBO Collector Cutoff current VCB= 120V; IE=0 100 μA IEBO Emitter Cut-off current VEB= 6V; IC= 0 10 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 2000 hFE-2 DC Current Gain IC= 40A ; VCE= 4V 7 isc Website：www.iscsemi.cn CONDITIONS MIN 100 B 2 MAX UNIT V