isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.) @ IC= 4A APPLICATIONS ·Electronic ignitor ·Relay& solenoid drivers ·Motor controls ·Switching regulators n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO PARAMETER VALUE s c s i . w Collector-Base Voltage VCEO(SUS) Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage UNIT w w 400 V 350 V 400 V 15 V 6 A IC Collector Current-Continuous IB Base Current-Continuous 0.3 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -45~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃/W isc Website：www.iscsemi.cn 2SD835 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD835 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO MIN TYP. MAX UNIT 350 V IC= 0.1mA; IB= 0 400 V Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA; IC= 0 15 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 10mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 10mA 2.0 V ICBO Collector Cutoff Current mA IEBO Emitter Cutoff Current 100 mA hFE DC Current Gain m e s isc 0.1 1.0 μs 12.0 μs 6.0 μs Switching Times Turn-on Time tstg Storage Time tf B B B VCB= 400V; IE=0 w. w w ton B VEB= 15V; IC=0 IC= 4A; VCE= 1.5V IC = 4A, IB1 =-IB2 = 40mA, RL = 10Ω; Pw = 20μs, DutyCycle≤2% Fall Time isc Website：www.iscsemi.cn n c . i 2 400