ISC 2SD870

Inchange Semiconductor
Product Specification
2SD870
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-collector voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
IE
Emitter current
-5
A
PT
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD870
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Emitter-base breakdown voltage
IE=200m A;IC=0
VCEsat
Collector-emitter saturation voltage
IC=4 A;IB=0.8 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4 A;IB=0.8 A
1.5
V
ICBO
Collector cut-off current
VCB=500V;IE=0
10
μA
hFE
DC current gain
IC=1A ; VCE=5V
VF
Diode forward voltage
IF=5A
2.0
V
fT
Transition frequency
IC=0.1A ; VCE=10V
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
Fall time
IC=4A;IB1end=0.8A
COB
tf
5
UNIT
V
B
B
2
8
3
MHz
165
pF
1.0
μs
Inchange Semiconductor
Product Specification
2SD870
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3