Inchange Semiconductor Product Specification 2SD882 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SB772 APPLICATIONS ·Audio amplifier ·Voltage regulator ·DC-DC converter ·Relay driver PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A ICM Collector current-peak 7 A PD Total power dissipation Ta=25℃ 1 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD882 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2.0A; IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=2.0A ;IB=0.2A 2.0 V ICBO Collector cut-off current VCB=30V; IE=0 1 μA IEBO Emitter cut-off current VEB=3V; IC=0 1 μA hFE-1 DC current gain IC=20mA ; VCE=2V 30 hFE-2 DC current gain IC=1A ; VCE=2V 60 Transition frequency IC=0.1A ; VCE=5V 90 MHz Collector output capacitance f=1MHz ; VCB=10V 45 pF fT COB CONDITIONS hFE-2 Classifications R Q P E 60-120 100-200 160-320 200-400 2 MIN TYP. MAX 30 UNIT V 400 Inchange Semiconductor Product Specification 2SD882 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SD882 Silicon NPN Power Transistors 4