ISC 2SD905

Inchange Semiconductor
Product Specification
2SD905
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For high voltage power switching TV
horizontal deflection output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1400
V
VCEO
Collector-emitter voltage
Open base
650
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD905
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=∞
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ; IC=0
VCEsat
Collector-emitter saturation voltage
IC=8A;IB=1.5A
10
V
VBEsat
Base-emitter saturation voltage
IC=8A;IB=1.5A
1.5
V
ICES
Collector cut-off current
VCE=1400V ; RBE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.5
mA
hFE
DC current gain
IC=1A ; VCE=5V
Fall time
IC=6.8A; IB1=1.1A;LB=0
tf
CONDITIONS
2
MIN
TYP.
MAX
UNIT
650
V
5
V
8
36
1.0
μs
Inchange Semiconductor
Product Specification
2SD905
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3