Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors · DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current (Max: 3A) ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 45 V VEBO Emitter -base voltage Open collector 6 V IC Collector current (DC) 3 A ICM Collector current-Peak 6 A IBM Base current-Peak 0.5 A PT Total power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 100 K/W 6 K/W Tmb≤60℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal resistance from junction to ambient Rth j-mb Thermal resistance from junction to mounting base Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat-1 Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.3 V VCEsat-2 Collector-emitter saturation voltage IC=2A; IB=0.2A 0.7 V VBEsat-1 Base-emitter saturation voltage IC=0.5A; IB=50mA 1.2 V VBEsat-2 Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V VCB=50V; IE=0 50 nA VCB=50V; IE=0 Tj=150℃ 10 μA 50 nA ICBO Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.5A ; VCE=12V 40 hFE-2 DC current gain IC=2A ; VCE=1V 20 Transition frequency IC=0.25A; VCE=5V ;f=100MHz 60 fT 2 MHz Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3