isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD540B DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Complement to Type BD539B APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC PC TJ Tstg n c . i m e VALUE UNIT -80 V s c s i . w -80 w w -5 Collector Current-Continuous -5 Collector Power Dissipation @ Ta=25℃ 2 V V A W Collector Power Dissipation @ TC=25℃ 45 Junction Temperature 150 ℃ -65~150 ℃ Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD540B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A -0.25 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A -0.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A -1.5 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -4V -1.25 V ICEO Collector Cutoff Current mA ICES Collector Cutoff Current -0.2 mA IEBO Emitter Cutoff Current -1.0 mA hFE-1 DC Current Gain m e s isc -0.3 hFE-2 hFE-3 B B B w. VCE= -80V; VBE= 0 n c . i VEB= -5V; IC= 0 IC= -0.5A; VCE= -4V 40 DC Current Gain IC= -1A; VCE= -4V 30 DC Current Gain IC= -3A; VCE= -4V 12 isc Website：www.iscsemi.cn 2 MAX -80 B VCB= -60V; IB= 0 w w MIN UNIT V